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hy5du113222fm(p) 512m(16mx32) gddr sdram hy5du113222fm(p) this document is a general product descript ion and is subject to change without notice. hynix electronics does not assume any r espon- sibility for use of circuits described. no patent licenses are implied. rev. 0.1 / oct. 2004 1
rev. 0.1 / oct. 2004 2 hy5du113222fm(p) revision history revision no. history draft date remark 0.1 1) defined target spec. oct. 2004
description the hynix hy5du113222fm(p) is a 536, 870,912-bit cmos double data rate(ddr) synchronous dram which consists of two 256mbit(x32) - multi-chip-, ideally suited for the po int-to-point applications wh ich requires high bandwidth. the hynix 16mx32 ddr sdrams offer fully synchronous operations referenced to both rising and falling edges of the clock. while all addresses and control inputs are latched on th e rising edges of the ck (fal ling edges of the /ck), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. the data paths are inter- nally pipelined and 2-bit prefetched to achieve very high bandwidth. all input and output voltage levels are compatible with sstl_2. features ? the hynix hy5du113222fm(p) guarantee until 200mhz speed at dll_off condition ?2.5v v dd and v ddq wide range max power supply ? all inputs and outputs are compatible with sstl_2 interface ? 12mm x 12mm, 144ball fbga with 0.8mm pin pitch ? fully differential clock inputs (ck, /ck) operation ? the signals of chip select control the each chip with cs0 and cs1, individually. ? double data rate interface ? source synchronous - data transaction aligned to bidirectional data strobe (dqs0 ~ dqs3) ? data outputs on dqs edges when read (edged dq) data inputs on dqs centers when write (centered dq) ? data(dq) and write masks(dm) latched on the both rising and falling edges of the data strobe ? all addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock ? write mask byte controls by dm (dm0 ~ dm3) ? programmable /cas latency 5 / 4 supported ? programmable burst length 2 / 4 / 8 with both sequential and interleave mode ? internal 4 bank operations with single pulsed /ras ? tras lock-out function supported ? auto refresh and self refresh supported ? 4096 refresh cycles / 32ms (both chips do refresh operation, simultaneously) ? half strength and matched impedance driver option controlled by emrs ordering information note) hynix supports lead free parts for each speed grade wi th same specification, except lead free materials. we'll add "p" character after "fm" for lead free product. for example, the part number of 300mhz lead free product is hy5du113222fm(p) - 33. part no. power supply clock frequency max data rate interface package hy5du113222fm(p)-2 v dd 2.5v v ddq 2.5v 500mhz 1000mbps/pin sstl_2 12mmx12mm 144ball fbga hy5du113222fm(p)-22 450mhz 900mbps/pin hy5du113222fm(p)-25 400mhz 800mbps/pin hy5du113222fm(p)-28 350mhz 700mbps/pin hy5du113222fm(p)-33 300mhz 600mbps/pin hy5du113222fm(p)-36 275mhz 550mbps/pin hy5du113222fm(p)-4 250mhz 500mbps/pin hy5du113222fm(p) rev. 0.1 / oct. 2004 3 preliminary
rev. 0.1 / oct. 2004 4 hy5du113222fm(p) pin configuration (top view) row and column address table items 16mx32 organization 2m x 32 x 4banks x 2chip row address a0 ~ a11 column address a0 ~ a7, a9 bank address ba0, ba1 auto precharge flag a8 refresh 4k chip selection cs0, cs1 note: 1. 16mx32 ddr is composed of two 8mx32 ddr. 2. multi-chip(16mx32 ddr) is controll ed by cs0 and cs1, individually. note : 1. outer ball, a1~a14, p1~p14, a1~p1, a14~p14 are depopulated. 2. ball l9(nc2 ) is reserved for a12. 3. ball m10(nc3) is reserved for ba2. a b c d e f g h j k l m n p 1 2 3 4 5 6 7 8 9 10 11 12 13 14 dqs0 dm0 vssq dq3 dq2 dq0 dq31 dq29 dq28 vssq dm3 dqs3 dq4 vddq nc vddq dq1 vddq vddq dq30 vddq nc vddq dq27 dq6 dq5 vssq vssq vssq vdd vdd vssq vssq vssq dq26 dq25 dq7 vddq vdd vss vssq vss vss vssq vss vdd vddq dq24 dq17 dq16 vddq vssq vss termal vss termal vss termal vss termal vssq vddq dq15 dq14 dq19 dq18 vddq vssq vss termal vss termal vss termal vss termal vssq vddq dq13 dq12 dqs2 dm2 nc vssq vss termal vss termal vss termal vss termal vssq nc dm1 dqs1 dq21 dq20 vddq vssq vss termal vss termal vss termal vss termal vssq vddq dq11 dq10 dq22 dq23 vddq vssq vss vss vss vss vssq vddq dq9 dq8 /cas /w/e vdd vss a10 vdd vdd nc2 vss vdd nc nc /ras nc /cs1 ba1 a2 a11 a9 a5 nc3 clk /clk nc nc ba0 a0 a1 a3 a4 a6 a7 a8/ap cke vref /cs0
rev. 0.1 / oct. 2004 5 hy5du113222fm(p) pin description pin type description ck, /ck input clock: ck and /ck are differen tial clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck and negative edge of /ck. output (read) data is referenced to the crossings of ck and /ck (both directions of crossing). cke input clock enable: cke high activa tes, and cke low deactivates internal clock signals, and device input buffers and output drivers. taking cke low provides precharge power down and self refresh operation (all ba nks idle), or active power down (row active in any bank). cke is synchronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit, and for output disable. cke must be maintained high throughout read and write accesses. input buffers, excluding ck, /ck and cke are disabled during powe r down. input buffers, excluding cke are disabled during self refresh. cke is an sstl_2 input, but will detect an lvcmos low level after vdd is applied. /cs0, /cs1 input chip select : enables or disables all inputs except ck, /ck, cke, dqs and dm. all com- mands are masked when cs0 or cs1 is register ed high. cs0 or cs1 provides for external bank selection on systems with multiple banks. cs0 and cs1 are considered part of the command code. when it is the operationg st ate of mrs, power up sequence, emrs, it should be enabled in pairs. except this case, it can be operated, individually. ba0, ba1 input bank address inputs: ba0 and ba1 define to which bank an active, read, write or pre- charge command is being applied. a0 ~ a11 input address inputs: provide the row address for active commands, and the column address and auto precharge bit for read/write commands, to select one location out of the memory array in the respective bank. a8 is sampled during a precharge command to determine whether the precharge applies to one bank (a8 low) or all banks (a8 high). if only one bank is to be precharg ed, the bank is selected by ba0, ba1. the address inputs also provide the op code during a mode register set command. ba0 and ba1 define which mode register is loaded during the mode register set command (mrs or emrs). /ras, /cas, /we input command inputs: /ras, /cas and /we (along with /cs) define the command being entered. dm0 ~ dm3 input input data mask: dm(0~3) is an input mask signal for write data. input data is masked when dm is sampled high along with that in put data during a write access. dm is sam- pled on both edges of dqs. although dm pi ns are input only, the dm loading matches the dq and dqs loading. dm0 corresponds to the data on dq0-q7; dm1 corresponds to the data on dq8-q15; dm2 corresponds to the data on dq16-q23; dm3 corresponds to the data on dq24-q31. d q s 0 ~ d q s 3 i / o data strobe: output with read data, input with write data. edge aligned with read data, centered in write data. used to capture wr ite data. dqs0 corresponds to the data on dq0-q7; dqs1 corresponds to the data on dq 8-q15; dqs2 corresponds to the data on dq16-q23; dqs3 corresponds to the data on dq24-q31 dq0 ~ dq31 i/o data input / output pin : data bus v dd /v ss supply power supply for internal circuits and input buffers. v ddq /v ssq supply power supply for output buffers for noise immunity. v ref supply reference voltage for inputs for sstl interface. nc nc no connection.
rev. 0.1 / oct. 2004 6 hy5du113222fm(p) functional block diagram (4banks x 2mbit x 32 i/o) x 2chips double data rate synchronous dram bank control write data register 2-bit prefetch unit mode register row decoder sense amp 2mx32/bank0 2mx32/bank3 2mx32/bank2 2mx32/bank1 2-bit prefetch unit output buffer input buffer data strobe transmitter dll block column address counter column decoder data strobe receiver command decoder 64 32 32 clk, /clk 64 ds dq[0:31] dqs(0~3) clk_dll ds mode register address buffer clk cke dm(0~3) /we /ras /cas cs1 /clk clk cke dm(0~3) /we /ras /cas cs0 /clk ba0,ba1 a0~a11 ba0,ba1 a0~a11
rev. 0.1 / oct. 2004 7 hy5du113222fm(p) simplified command truth table command cken-1 cken cs0/ cs1 ras cas we addr a8/ ap ba note extended mode register set h x l l l l op code 1,2,6 mode register set h x l l l l op code 1,2,6 device deselect hx hxxx x1 no operation lhhh bank active h x l l h h ra v 1 read h x lhlhca l v 1,7 read with autoprecharge h1,3,7 write hxlhllca l v 1,7 write with autoprecharge h1,4,7 precharge all banks hxllhlx hx1,5 precharge selected bank lv1 read burst stop h x l h h l x 1 auto refresh h h lllh x 1 self refresh entryh l lllh x 1,6 exit l h hxxx 1,6 lhhh precharge power down mode entry h l hxxx x 1,6 lhhh 1,6 exit l h hxxx 1,6 lhhh 1,6 active power down mode entry h l hxxx x 1,6 lvvv 1,6 exit l h x 1,6 note : 1. dm(0~3) states are don?t care. refer to below write mask truth table. 2. op code(operand code) consists of a0~a11 and ba0~ba1 us ed for mode register setting during extended mrs or mrs. before entering mode register set mode, all banks must be in a precharge state and mrs command can be issued after trp period from prechagre command. 3. if a read with autoprecharge command is detected by memory component in ck(n), then there will be no command presented to activated bank until ck(n+bl/2+trp). 4. if a write with autoprecharge command is detected by memory component in ck(n), then there will be no command presented to activated bank until ck(n+bl/2+1+tdpl+trp). last data-in to prechage delay(tdpl) which is also called write recovery tim e (twr) is needed to guarantee that the last data has been completely written. 5. if a8/ap is high when precharge command being issued, ba0/ba1 are ignored and all banks are selected to be precharged. 6. both of cs0 & cs1 should be enabled simultaneously. ( h=logic high level, l=logic low level, x=don?t care, v=va lid data input, op code=operand code, nop=no operation )
rev. 0.1 / oct. 2004 8 hy5du113222fm(p) write mask truth table function cken-1 cken /cs0, /cs1, /ras, /cas, /we dm(0~3) addr a8/ ap ba note data write h x x l x 1,2 data-in mask h x x h x 1,2 note : 1. write mask command masks burst write data with reference to dqs(0~3) and it is not related with read data. 2. dm0 corresponds to the data on dq0-q7; dm1 corresponds to th e data on dq8-q15; dm2 correspo nds to the data on dq16-q23; dm3 corresponds to the data on dq24-q31.
rev. 0.1 / oct. 2004 9 hy5du113222fm(p) operation command truth table - i current state /cs0 /cs1 /ras /cas /we address command action idle hxxx x dsel nop or power down 3 lhhh x nop nop or power down 3 lhhl x bst illegal 4 l h l h ba, ca, ap read/readap illegal 4 l h l l ba, ca, ap write/writeap illegal 4 l l h h ba, ra act row activation llhl ba, ap pre/pall nop lllh x aref/sref auto refresh or self refresh 5 l l l l opcode mrs *12 mode register set row active hxxx x dsel nop lhhh x nop nop lhhl x bst illegal 4 l h l h ba, ca, ap read/readap*13 begin read : optional ap 6 l h l l ba, ca, ap write/writeap*13 begin write : optional ap 6 llhhba, ra act illegal 4 llhl ba, ap pre/pall precharge 7 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 read h x x x x dsel continue burst to end l h h h x nop continue burst to end l h h l x bst terminate burst l h l h ba, ca, ap read/readap*13 term burst, new read:optional ap 8 l h l l ba, ca, ap write/writeap illegal llhhba, ra act illegal 4 l l h l ba, ap pre/pall term burst, precharge lllh x aref/sref illegal 11 llllopcode mrs illegal 11 write h x x x x dsel continue burst to end l h h h x nop continue burst to end lhhl x bst illegal 4 l h l h ba, ca, ap read/readap*13 term burst, new read:optional ap 8 l h l l ba, ca, ap write/writeap*13 term burst, new write:optional ap
rev. 0.1 / oct. 2004 10 hy5du113222fm(p) operation command truth table - ii current state /cs0 /cs1 /ras /cas /we address command action write llhhba, ra act illegal 4 l l h l ba, ap pre/pall term burst, precharge lllh x aref/sref illegal 11 llllopcode mrs illegal 11 read with autopre- charge h x x x x dsel continue burst to end l h h h x nop continue burst to end lhhl x bst illegal l h l h ba, ca, ap read/readap illegal 10 l h l l ba, ca, ap write/writeap illegal 10 llhhba, ra act illegal 4,10 llhl ba, ap pre/pall illegal 4,10 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 write autopre- charge h x x x x dsel continue burst to end l h h h x nop continue burst to end lhhl x bst illegal l h l h ba, ca, ap read/readap illegal 10 l h l l ba, ca, ap write/writeap illegal 10 llhhba, ra act illegal 4,10 llhl ba, ap pre/pall illegal 4,10 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 pre- charge h x x x x dsel nop-enter idle after trp l h h h x nop nop-enter idle after trp lhhl x bst illegal 4 l h l h ba, ca, ap read/readap illegal 4,10 l h l l ba, ca, ap write/writeap illegal 4,10 llhhba, ra act illegal 4,10 l l h l ba, ap pre/pall nop-enter idle after trp lllh x aref/sref illegal 11 llllopcode mrs illegal 11
rev. 0.1 / oct. 2004 11 hy5du113222fm(p) operation command truth table - iii current state /cs0 /cs1 /ras /cas /we address command action row activating h x x x x dsel nop - enter row act after trcd l h h h x nop nop - enter row act after trcd lhhl x bst illegal 4 l h l h ba, ca, ap read/readap illegal 4,10 l h l l ba, ca, ap write/writeap illegal 4,10 llhhba, ra act illegal 4,9,10 llhl ba, ap pre/pall illegal 4,10 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 write recovering h x x x x dsel nop - enter row act after twr l h h h x nop nop - enter row act after twr lhhl x bst illegal 4 l h l h ba, ca, ap read/readap illegal l h l l ba, ca, ap write/writeap illegal llhhba, ra act illegal 4,10 llhl ba, ap pre/pall illegal 4,11 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 write recovering with autopre- charge h x x x x dsel nop - enter precharge after tdpl l h h h x nop nop - enter precharge after tdpl lhhl x bst illegal 4 l h l h ba, ca, ap read/readap illegal 4,8,10 l h l l ba, ca, ap write/writeap illegal 4,10 llhhba, ra act illegal 4,10 llhl ba, ap pre/pall illegal 4,11 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 refreshing h x x x x dsel nop - enter idle after trc l h h h x nop nop - enter idle after trc lhhl x bst illegal 11 l h l h ba, ca, ap read/readap illegal 11
rev. 0.1 / oct. 2004 12 hy5du113222fm(p) operation command truth table - iv note : 1. h - logic high level, l - logic low level, x - don?t care, v - valid data input, ba - bank address, ap - autoprecharge address, ca - column address, ra - row address, nop - no operation. 2. all entries assume that cke was active(high level) during the preceding clock cycle. 3. if both banks are idle and cke is inactive(low level), then in power down mode. 4. illegal to bank in specified state. function may be legal in the bank indicated by bank addr ess(ba) depending on the state o f that bank. 5. if both banks are idle and cke is inactive(low level), then self refresh mode. 6. illegal if trcd is not met. 7. illegal if tras is not met. 8. must satisfy bus contention, bus turn ar ound, and/or write recovery requirements. 9. illegal if trrd is not met. 10. illegal for single bank, but legal for other banks in multi-bank devices. 11. illegal for all banks. 12. both of cs0 & cs1 should be enabled in pairs. 13. one of cs0 & cs1 should be enabled, individually. current state /cs0 /cs1 /ras /cas /we address command action write l h l l ba, ca, ap write/writeap illegal 11 llhhba, ra act illegal 11 llhl ba, ap pre/pall illegal 11 lllh x aref/sref illegal 11 llllopcode mrs illegal 11 mode register accessing h x x x x dsel nop - enter idle after tmrd l h h h x nop nop - enter idle after tmrd lhhl x bst illegal 11 l h l h ba, ca, ap read/readap illegal 11 l h l l ba, ca, ap write/writeap illegal 11 llhhba, ra act illegal 11 llhl ba, ap pre/pall illegal 11 lllh x aref/sref illegal 11 llllopcode mrs illegal 11
rev. 0.1 / oct. 2004 13 hy5du113222fm(p) cke function truth table note : when cke=l, all dq and dqs(0~ 3) must be in hi-z state. 1. cke and /cs must be kept high for a minimum of 200 stable input clocks before issuing any command. 2. all command can be stored after 2 clocks from low to high transition of cke. 3. illegal if ck is suspended or stopped during the power down mode. 4. self refresh can be entered only from the all banks idle state. 5. disabling ck may cause malfunction of any bank which is in active state. 6. * both cso & csi should be emabled, simultaneouly. current state cken- 1 cken /cs0 /cs1 /ras /cas /we /add action self refresh 1 h xxxxxx invalid l h h x x x x exit self refresh, enter idle after tsrex* l h l h h h x exit self refresh, enter idle after tsrex* lhlhhlx illegal lhlhlxx illegal l hllxxx illegal l l x x x x x nop, continue self refresh power down 2 h xxxxxx invalid l h h x x x x exit power down, enter idle* l h l h h h x exit power down, enter idle* lhlhhlx illegal lhlhlxx illegal l hllxxx illegal l l x x x x x nop, continue power down mode all banks idle 4 h h x x x x x see operation command truth table hllllhx enter self refresh* h l h x x x x exit power down* h l l h h h x exit power down* hllhhlx illegal hllhlxx illegal hlllhxx illegal hlllllx illegal l lxxxxx nop any state other than above h h x x x x x see operation command truth table h lxxxxx illegal 5 l hxxxxx invalid l lxxxxx invalid
rev. 0.1 / oct. 2004 14 hy5du113222fm(p) simplified state diagram note: *1.both of cs0 and cs1 should be enabled in pairs. *2.both of cs0 and cs1 should be enabled, individually. mrs sref srex pden pdex act aref pdex pden bst read write write writeap writeap read readap readap pre(pall) pre(pall) pre(pall) command input automatic sequence idle auto refresh pre- charge power-up power applied mode register set power down write with autopre- charge power down write read with autopre- charge bank active read self refresh *1 *2 *2 *2 *2 mrs sref srex pden pdex act aref pdex pden bst read write write writeap writeap read readap readap pre(pall) pre(pall) pre(pall) command input automatic sequence idle auto refresh pre- charge power-up power applied mode register set power down write with autopre- charge power down write read with autopre- charge bank active read self refresh mrs sref srex pden pdex act aref pdex pden bst read write write writeap writeap read readap readap pre(pall) pre(pall) pre(pall) command input automatic sequence idle auto refresh pre- charge power-up power applied mode register set power down write with autopre- charge power down write read with autopre- charge bank active read self refresh *1 *2 *2 *2 *2
rev. 0.1 / oct. 2004 15 hy5du113222fm(p) power-up sequence and device initialization ddr sdrams must be powered up and initialized in a pred efined manner. operational pr ocedures other than those specified may result in undefined operation. except for ck e, inputs are not re cognized as valid until after vref is applied. cke is an sstl_2 input, but will detect an lv cmos low level after vdd is applied. maintaining an lvcmos low level on cke during power-up is required to guarant ee that the dq and dqs outputs will be in the high-z state, where they will remain until driven in normal operation (by a read access). after all po wer supply and reference volt- ages are stable, and the clock is stable, the ddr sdram requ ires a 200us delay prior to applying an executable com- mand. once the 200us delay has been satisfied, a deselect or nop command should be applied, and cke should be brought high. following the nop command, a precharg e all command should be applied. next a extended mode register set command should be issued for the ex tended mode register, to enable the dll, then a mode register set command should be issued for the mode re gister, to reset the dll, and to program the operating parameters. after the dll reset, txsrd(dll locking time) sh ould be satisfied for read command. after the mode reg- ister set command, a precharge all command should be a pplied, placing the device in the all banks idle state. once in the idle state, two auto refresh cycles must be performed. additionally, a mode register set command for the mode register, with the reset dll bit deactivated lo w (i.e. to program operating parameters without resetting the dll) must be performed. following these cycl es, the ddr sdram is ready for normal operation. 1. apply power - vdd, vddq, vtt, vref in the following po wer up sequencing and attemp t to maintain cke at lvc- mos low state. (all the other input pins may be undefined. no power sequencing is specified during power up or power down given the following cirteria : ? vdd and vddq are driven from a single power converter output. ? vtt is limited to 1.44v (ref lecting vddq(max)/2 + 50mv vref variation + 40mv vtt variation). ? vref tracks vddq/2. ? a minimum resistance of 42 ohms (22 ohm series resist or + 22 ohm parallel resistor - 5% tolerance) limits the input current from the vtt supply into any pin. if the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up : 2. start clock and maintain stable clock for a minimum of 200usec. 3. after stable power and clock, apply nop condition and take cke high. 4. issue extended mode register set (emrs) to enable dll. 5. issue mode register set (mrs) to reset dll and set devi ce to idle state with bit a8=high. (an additional 200 cycles(txsrd) of clock are required for locking dll) 6. issue precharge commands for all banks of the device. voltage description sequencing voltage relationship to avoid latch-up vddq after or with vdd < vdd + 0.3v vtt after or with vddq < vddq + 0.3v vref after or with vddq < vddq + 0.3v
rev. 0.1 / oct. 2004 16 hy5du113222fm(p) 7. issue 2 or more auto refresh commands. 8. issue a mode register set command to initia lize the mode register with bit a8 = low. power-up sequence code code code code code code code code code code code code code code code nop pre mrs emrs pre nop mrs aref act rd vdd vddq vtt vref /clk clk cke cmd dm addr a10 ba0, ba1 dqs dq's lvcmos low level tis tih tvtd t=200usec trp tmrd trp trfc tmrd txsrd* read non-read command power up vdd and ck stable precharge all emrs set mrs set reset dll (with a8=h) precharge all 2 or more auto refresh mrs set (with a8=l) * 200 cycle(txsrd) of ck are required (for dll locking) before read command tmrd
rev. 0.1 / oct. 2004 17 hy5du113222fm(p) mode register set (mrs) the mode register is used to store the various operating mo des such as /cas latency, addressing mode, burst length, burst type, test mode, dll reset. the mode register is pr ogram via mrs command. this command is issued by the low signals of /ras, /cas, /cs0 ,/cs1, /we an d ba0. this command can be issued only when all banks are in idle state and cke must be high at least one cycle before the mode regi ster set command can be issued. two cycles are required to write the data in mode register. during the the mrs cycle, any command cannot be issued. once mode register field is determined, the information will be held until resetted by another mrs command. ba1 ba0 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 0 0 rfu dr tm cas latency bt burst length a2 a1 a0 burst length sequential interleave 0 0 0 reserved reserved 001 2 2 010 4 4 011 8 8 1 0 0 reserved reserved 1 0 1 reserved reserved 1 1 0 reserved reserved 1 1 1 reserved reserved a3 burst type 0 sequential 1 interleave a6 a5 a4 cas latency 000 reserved 001 reserved 010 reserved 011 reserved 100 4 101 5 110 reserved 111 reserved a7 te s t mo de 0normal 1 vendor test mode a8 dll reset 0no 1yes ba0 mrs type 0mrs 1emrs
rev. 0.1 / oct. 2004 18 hy5du113222fm(p) burst definition burst length & type read and write accesses to the ddr sdram are burst orient ed, with the burst length be ing programmable. the burst length determines the maximum number of column locations that can be acce ssed for a given read or write com- mand. burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types. reserved states should not be used, as unknown operatio n or incompatibility with future versions may result. when a read or write command is issued, a block of column s equal to the burst length is effectively selected. all accesses for that burst take place within this block, mean ing that the burst wraps within the block if a boundary is reached. the block is uniquely selected by a1-ai when the burst length is set to two, by a2-ai when the burst length is set to four and by a3-ai when the burst length is set to eigh t (where ai is the most significant column address bit for a given configuration). the remaining (least significant) address bit(s) is (are) used to select the starting location within the block. the programmed burst length applies to both read and write bursts. accesses within a given burst may be programmed to be either sequential or interleaved; th is is referred to as the burst type and is selected via bit a3. the ordering of acce sses within a burst is determined by the burst length, the burst type and the starting column addres s, as shown in burst definitionon table burst length starting address (a2,a1,a0) sequential interleave 2 xx0 0, 1 0, 1 xx1 1, 0 1, 0 4 x00 0, 1, 2, 3 0, 1, 2, 3 x01 1, 2, 3, 0 1, 0, 3, 2 x10 2, 3, 0, 1 2, 3, 0, 1 x11 3, 0, 1, 2 3, 2, 1, 0 8 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5 011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1 111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0
rev. 0.1 / oct. 2004 19 hy5du113222fm(p) cas latency the read latency or cas latency is the delay in clock cy cles between the registration of a read command and the availability of the first burst of output data . the latency can be programmed 5 / 4 clocks. if a read command is registered at clock edge n, and the la tency is m clocks, the data is available nominally coincident with clock edge n + m. reserved states should not be used as unknown operation or incompatibility with future versions may result. dll reset the dll must be enabled for normal operation. dll enable is required during power up initialization, and upon return- ing to normal operation after having disabled the dll for th e purpose of debug or evaluation. the dll is automatically disabled when entering self refresh oper ation and is automatically re-enabled upon exit of self refresh operation. any time the dll is enabled, 200 clock cycles must occur to al low time for the internal clock to lock to the externally applied clock before an any command can be issued. output driver impedance control this device supports both half strength driver and matched impedance driver, inte nded for lighter load and/or point-to- point environments. half strength driver is to define about 50% of full drive st rength which is specified to be sstl_2, class ii, and matched impedance driver, about 30% of full drive strength.
rev. 0.1 / oct. 2004 20 hy5du113222fm(p) extended mode register set (emrs) the extended mode register controls fu nctions beyond those controlled by the mode register; these additional func- tions include dll enable/disable, output dr iver strength selection(optional). thes e functions are contro lled via the bits shown below. the extended mode register is programmed via the mode register set command ( ba0=1 and ba1=0) and will retain the stored information until it is programmed again or the device loses power. the extended mode register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before in itiating any subsequent operation. viol ating either of these requirements will result in unspecified operation. ba1 ba0 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 0 1 rfu* ds rfu* ds ds dll a0 dll enable 0enable 1diable ba0 mrs type 0mrs 1emrs a6 a1 output driver impedance control 00 full 01 half 10 rfu* 11 weak * all bits in rfu address fields must be programmed to zero, all other states are reserved for future usage.
rev. 0.1 / oct. 2004 21 hy5du113222fm(p) absolute maximum ratings note : operation at above absolute maximum rating can adversely affect device reliability dc operating conditions (ta=0 to 70 o c, voltage referenced to v ss = 0v) note : 1. v ddq must not exceed the level of v dd . 2. v il (min) is acceptable -1.5v ac pulse width with 5ns of duration. 3. v ref is expected to be equal to 0.5*vddq of the transmitting device, and to track variations in the dc level of the same. peak to peak noise on v ref may not exceed 2% of the dc value. dc characteristics i (ta=0 to 70 o c, voltage referenced to v ss = 0v) note : 1. v in = 0 to 3.6v, all other pins are not tested under v in =0v. 2. d out is disabled, v out =0 to 2.7v parameter symbol rating unit ambient temperature t a 0 ~ 70 o c storage temperature t stg -55 ~ 125 o c voltage on any pin relative to v ss v in , v out -0.5 ~ 3.6 v voltage on v dd relative to v ss v dd -0.5 ~ 3.6 v voltage on v ddq relative to v ss v ddq -0.5 ~ 3.6 v output short circuit current i os 50 ma power dissipation p d 2w soldering temperature ? time t solder 260 ? 10 o c ? sec parameter symbol min typ max unit note power supply voltage v dd 2.375 2.5 2.7 v 1 power supply voltage v ddq 2.375 2.5 2.7 v 1 input high voltage v ih v ref + 0.15 - v ddq + 0.3 v input low voltage v il -0.3 - v ref - 0.15 v 2 termination voltage v tt v ref - 0.04 v ref v ref + 0.04 v reference voltage v ref 0.49*v ddq 0.5*v ddq 0.51*v ddq v3 parameter symbol min max unit note input leakage current i li -2 2 ua 1 output leakage current i lo -5 5 ua 2 output high voltage v oh v tt + 0.76 - v i oh = -15.2ma output low voltage v ol -v tt - 0.76 v i ol = +15.2ma
rev. 0.1 / oct. 2004 22 hy5du113222fm(p) dc characteristics ii (ta=0 to 70 o c, voltage referenced to v ss = 0v) note : 1. i dd1, idd4 and i dd5 depend on output loading and cycle rates. spec ified values are measured with the output open. 2. min. of t rfc (auto refresh row cycle time) is shown at ac characteristics. parameter sym bol test condition speed unit note 2 22 25 28 33 36 4 operating current i dd0 one bank; active - precharge; trc=trc(min); tck=tck(min); dq,dm and dqs inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 690 650 610 570 540 520 500 ma 1 operating current i dd1 b u r s t l e n g t h = 2 , o n e b a n k a c t i v e t rc t rc (min), i ol =0ma 730 690 650 610 580 560 540 ma 1 precharge standby current in power down mode i dd2p cke v il (max), t ck =min 100 100 100 100 100 100 100 ma precharge standby current in non power down mode i dd2n cke v ih (min), /cs v ih (min), t ck = min, input signals are changed one time during 2clks 610 580 550 510 480 470 460 ma active standby cur- rent in power down mode i dd3p cke v il (max), t ck =min 140 140 140 120 100 100 100 ma active standby cur- rent in non power down mode i dd3n cke v ih (min), /cs v ih (min), t ck =min, input signals are changed one time during 2clks 680 640 600 560 540 520 500 ma burst mode operating current i dd4 t ck t ck (min), i ol = 0 m a all banks active 1190 1120 1050 980 870 810 800 ma 1 auto refresh current i dd5 t rc t rfc ( m i n ) , all banks active 940 920 900 880 770 760 750 ma 1,2 self refresh current i dd6 cke 0.2v 16 16 16 16 16 16 16 ma operating current - four bank operation i dd7 four bank interleaving with bl=4, refer to the following page for detailed test condition 1440 1320 1200 1080 970 860 850 ma
rev. 0.1 / oct. 2004 23 hy5du113222fm(p) ac operating conditions (ta=0 to 70 o c, voltage referenced to v ss = 0v) note : 1. vid is the magnitude of the difference between the input level on ck and the input on /ck. 2. the value of vix is expected to equal 0.5*v ddq of the transmitting device and must track variations in the dc level of the same. ac operating test conditions (ta=0 to 70 o c, voltage referenced to vss = 0v) parameter symbol min max unit note input high (logic 1) voltage, dq, dqs and dm signals v ih(ac) v ref + 0.35 v input low (logic 0) voltag e, dq, dqs and dm signals v il(ac) v ref - 0.35 v input differential voltage, ck and /ck inputs v id(ac) 0.7 v ddq + 0.6 v 1 input crossing point voltage, ck and /ck inputs v ix(ac) 0.5*v ddq -0.2 0.5*v ddq +0.2 v 2 parameter value unit reference voltage v ddq x 0.5 v termination voltage v ddq x 0.5 v ac input high level voltage (v ih , min) v ref + 0.35 v ac input low level voltage (v il , max) v ref - 0.35 v input timing measurement reference level voltage v ref v output timing measurement reference level voltage v tt v input signal maximum peak swing 1.5 v input minimum signal slew rate 1 v/ns termination resistor (r t )50 ? series resistor (r s )25 ? output load capacitance for access time measurement (c l )30 pf
rev. 0.1 / oct. 2004 24 hy5du113222fm(p) ac characteristics - i (ac operating conditions unless otherwise noted) parameter symbol 2 22 25 28 unit note min max min max min max min max row cycle time t rc 23 - 22 - 19 - 17 - ck auto refresh row cycle time t rfc 25 - 24 - 21 - 19 - ck row active time t ras 15 100k 14 100k 12 100k 11 100k ck row address to column address delay for read t rcdrd 8-7- 6 -6- ck row address to column address delay for write t rcdwr 5-4- 3 -3- ck row active to row active delay t rrd 5-4- 4 -4- ck column address to column address delay t ccd 1-1- 1 -1- ck row precharge time t rp 8-7- 6 -6- ck write recovery time t wr 5-4- 3 -3- ck last data-in to read command t drl 3-2- 2 -2- ck auto precharge write recovery + precharge time t dal 13 - 11 - 9 - 9 - ck system clock cycle time cl=5 t ck 2 10 2.2 10 2.5 10 2.8 10 ns clock high level width t ch 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 ck clock low level width t cl 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 ck data-out edge to clock edge skew t ac -0.6 0.6 -0.6 0.6 -0.6 0.6 -0.6 0.6 ns dqs-out edge to clock edge skew t dqsck -0.6 0.6 -0.6 0.6 -0.6 0.6 -0.6 0.6 ns dqs-out edge to data-out edge skew t dqsq - 0.35 - 0.35 - 0.35 - 0.35 ns data-out hold time from dqs t qh thpmin -tqhs - thpmin -tqhs - thpmin -tqhs - thpmin -tqhs - ns 1,6 clock half period t hp tch/l min - tch/l min - tch/l min - tch/l min - ns 1,5 data hold skew factor t qhs - 0.35 - 0.35 - 0.35 - 0.35 ns 6 input setup time t is 0.6 - 0.75 - 0.75 - 0.75 - ns 2 input hold time t ih 0.6 - 0.75 - 0.75 - 0.75 - ns 2 write dqs high level width t dqsh 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 ck write dqs low level width t dqsl 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 ck clock to first rising edge of dqs-in t dqss 0.85 1.15 0.85 1.15 0.85 1.15 0.85 1.15 ck data-in setup time to dqs-in (dq & dm) t ds 0.35 - 0.35 - 0.35 - 0.35 - ns 3 data-in hold time to dqs-in (dq & dm) t dh 0.35 - 0.35 - 0.35 - 0.35 - ns 3
rev. 0.1 / oct. 2004 25 hy5du113222fm(p) ac characteristics - i (ac operating conditions unless otherwise noted) n ote : 1. this calculation accounts for tdqsq(max), the pulse width distortion of on-chip circuit and jitter. 2. data sampled at the rising edges of the cloc k : a0~a11, ba0~ba1, cke, /cs, /ras, /cas, /we. 3. data latched at both rising and falling e dges of data strobes(dqs0~dqs3) : dq, dm(0~3). 4. minimum of 200 cycles of stable input clocks after self refres h exit command, where cke is held high, is required to complete self refresh exit and lock the internal dll circuit of ddr sdram. 5. min (tcl, tch) refers to the smaller of the actual clock low ti me and the actual clock high time as provided to the device (i .e. this value can be greater than the minimum specification limits for tcl and tch). 6. thp = minimum half clock period for any given cycl e and is defined by clock high or clock low (tch, tcl). tqhs consists of tdqsqmax, the pulse width dist ortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 7. dqs, dm and dq input slew rate is specified to prev ent double clocking of data and preserve setup and hold times. signal transitions throug h the dc region must be monotonic. parameter symbol 2 22 25 28 unit note min max min max min max min max read dqs preamble time t rpre 0.91.10.91.1 0.9 1.10.91.1 ck read dqs postamble time t rpst 0.40.60.40.6 0.4 0.60.40.6 ck write dqs preamble setup time t wpres 0-0- 0 -0- ns write dqs preamble hold time t wpreh 0.35 - 0.35 - 0.35 - 0.35 - ck write dqs postamble time t wpst 0.40.60.40.6 0.4 0.60.40.6 ck mode register set delay t mrd 2-2- 2 -2- ck exit self refresh to any execute command t xsc 200 - 200 - 200 - 200 - ck 4 power down exit time t pdex 2tck + tis - 2tck + tis - 2tck + tis - 2tck + tis - ck average periodic refresh interval t refi - 7.8 - 7.8 - 7.8 - 7.8 us
rev. 0.1 / oct. 2004 26 hy5du113222fm(p) ac characteristics - i (continue) parameter symbol 33 36 4 unit note min max min max min max row cycle time t rc 15 - 14 - 13 - ck auto refresh row cycle time t rfc 17 - 16 - 15 - ck row active time t ras 10 100k 9 100k 8 100k ck row address to column address delay for read t rcdrd 6-5-5- ck row address to column address delay for write t rcdwr 3-2-2- ck row active to row active delay t rrd 3-3-3- ck column address to column address delay t ccd 1-1-1- ck row precharge time t rp 6-5-5- ck write recovery time t wr 3-3-3- ck last data-in to read command t drl 2-2-2- ck auto precharge write recovery + precharge time t dal 9-8-8- ck system clock cycle time cl=4 t ck 3.3103.610410 ns clock high level width t ch 0.45 0.55 0.45 0.55 0.45 0.55 ck clock low level width t cl 0.45 0.55 0.45 0.55 0.45 0.55 ck data-out edge to clock edge skew t ac -0.6 0.6 -0.6 0.6 -0.6 0.6 ns dqs-out edge to clock edge skew t dqsck -0.6 0.6 -0.6 0.6 -0.6 0.6 ns dqs-out edge to data-out edge skew t dqsq - 0.35 - 0.4 - 0.4 ns data-out hold time from dqs t qh thpmin -tqhs - thpmin -tqhs - thpmin -tqhs - ns 1,6 clock half period t hp tch/l min - tch/l min - tch/l min - ns 1,5 data hold skew factor t qhs - 0.35 - 0.4 - 0.4 ns 6 input setup time t is 0.75 - 0.75 - 0.75 - ns 2 input hold time t ih 0.75 - 0.75 - 0.75 - ns 2 write dqs high level width t dqsh 0.4 0.6 0.4 0.6 0.4 0.6 ck write dqs low level width t dqsl 0.4 0.6 0.4 0.6 0.4 0.6 ck clock to first rising edge of dqs-in t dqss 0.85 1.15 0.85 1.15 0.85 1.15 ck data-in setup time to dqs-in (dq & dm) t ds 0.35 - 0.4 - 0.4 - ns 3 data-in hold time to dqs-in (dq & dm) t dh 0.35 - 0.4 - 0.4 - ns 3
rev. 0.1 / oct. 2004 27 hy5du113222fm(p) ac characteristics - i (continue) n ote : 1. this calculation accounts for tdqsq(max), the pulse width distortion of on-chip circuit and jitter. 2. data sampled at the rising edges of the cloc k : a0~a11, ba0~ba1, cke, /cs, /ras, /cas, /we. 3. data latched at both rising and falling e dges of data strobes(dqs0~dqs3) : dq, dm(0~3). 4. minimum of 200 cycles of stable input clocks after self refres h exit command, where cke is held high, is required to complete self refresh exit and lock the internal dll circuit of ddr sdram. 5. min (tcl, tch) refers to the smaller of the actual clock low ti me and the actual clock high time as provided to the device (i .e. this value can be greater than the minimum specification limits for tcl and tch). 6. thp = minimum half clock period for any given cycl e and is defined by clock high or clock low (tch, tcl). tqhs consists of tdqsqmax, the pulse width dist ortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 7. dqs, dm and dq input slew rate is specified to prev ent double clocking of data and preserve setup and hold times. signal transitions throug h the dc region must be monotonic. parameter symbol 33 36 4 unit note min max min max min max read dqs preamble time t rpre 0.9 1.1 0.9 1.1 0.9 1.1 ck read dqs postamble time t rpst 0.4 0.6 0.4 0.6 0.4 0.6 ck write dqs preamble setup time t wpres 0-0-0- ns write dqs preamble hold time t wpreh 0.35 - 0.35 - 0.35 - ck write dqs postamble time t wpst 0.4 0.6 0.4 0.6 0.4 0.6 ck mode register set delay t mrd 2-2-2- ck exit self refresh to any execute command t xsc 200 - 200 - 200 - ck 4 power down exit time t pdex 2tck + tis - 1tck + tis - 1tck + tis - ck average periodic refresh interval t refi - 7.8 - 7.8 - 7.8 us
rev. 0.1 / oct. 2004 28 hy5du113222fm(p) ac characteristics - ii frequency cl trc trfc tras trcdrd trcdwr trp tdal unit 500mhz (2.0ns) 5 23 25 15 8 5 8 13 tck 450mhz (2.2ns) 5 22 24 14 7 4 7 11 tck 400mhz (2.5ns)51921126369tck 350mhz (2.8ns)51719116369tck 300mhz (3.3ns)41517106369tck 275mhz (3.6ns)4141695258tck 250mhz (4.0ns)4131585258tck
rev. 0.1 / oct. 2004 29 hy5du113222fm(p) capacitance (t a =25 o c, f=1mhz ) note : 1. v dd = min. to max., v ddq = 2.3v to 2.7v, v o dc = v ddq /2, v o peak-to-peak = 0.2v 2. pins not under test are tied to gnd. 3. these values are guaranteed by desi gn and are tested on a sample basis only. output load circuit parameter pin symbol min max unit input clock capacitance ck, /ck c ck 1.5 5.5 pf input capacitance all other input-only pins c in 1.5 5.5 pf input / output capacitance dq, dqs, dm c io 5.5 9.5 pf v ref v tt r t =50 ? ?
rev. 0.1 / oct. 2004 30 hy5du113222fm(p) package information 12mm x 12mm, 144ball fine-pitch ball grid array 12mm0.1mm 12mm0.1mm [ ball location ] ball existing optional (thermal ball, nc, no ball) depopulated ball 8.8mm 8.8mm 0.8mm 0.86mm0.05 0.35mm0.05 1.2mm0.1mm detailed "a" detailed "a" 0.12mm 0.5mm diameter 0.55max 0.45 min (mo 205-d, ae in jedec)

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